ISL9R30120G2【PDF 1/7 页】DIODE STEALTH 1200V 30A TO247-2

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Sheet目录134

[1页]2页 3页 4页 5页

-55 to 175 °C

ISL9R30120G2 — STEALTH? Diode

ISL9R30120G2

A, 1200

STEALTH? Diode

Features

Applications

Switch Mode Power Supplies

Hard Switched PFC Boost Diode

UPS Free Wheeling Diode

Motor Drive FWD

SMPS FWD

Snubber Diode

Device Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Rating Unit

VRRM

Repetitive Peak Reverse Voltage

1200 V

VRWM

Working Peak Reverse Voltage

1200 V

DC Blocking Voltage

1200 V

IF(AV)

Average Rectified Forward Current (TC

80oC)

IFRM

Repetitive Peak Surge Current

(20

kHz Square Wave)

IFSM

Nonrepetitive Peak

urge Current

alfwave 1 Phase 60

Hz)

325

Power Dissipation

166

EAVL

Avalanche Energy

mH)

TJ, TSTG

Operating and Storage Temperature Range

TPKG

Maximum Temperature for Soldering

Leads at

063

in (1.6

mm)

from Case for 10

Package Body for 10s,

ee Application Note

N-7528

300

260

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

CATHODE

(BOTTOM SIDE

CATHODE

ANODE

METAL)

JEDEC STYLE 2 LEAD TO-247

Package

Symbol

Stealth Recovery trr

= 269 ns (@

= 30 A)

? Max Forward Voltage, VF

= 3.3 V (@ T

= 25°C)

1200

V Reverse Voltage and High Reliability

? Avalanche Energy Rated

? RoHS Compliant

The ISL9R30120G2 is a STEALTH? diode optimized for

low loss performance in high frequency hard switched

applications. The STEALTH? family exhibits low reverse

recovery current (IRR) and exceptionally soft recovery under

typical operating conditions. This device is intended for use

as a free wheeling or boost diode in power supplies and

other power switching applications. The low IRR

and short ta

phase reduce loss in switching transistors. The soft

recovery minimizes ringing, expanding the range of

conditions under which the diode may be operated without

the use of additional snubber circuitry. Consider using the

STEALTH? diode with an SMPS IGBT to provide the most

efficient and highest power density design at lower cost.

?2002

Fairchild

Semiconductor

Corporation

ISL9R30120G2

Rev.

www.fairchildsemi.com

Description

February

2014

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